IXFK48N55
MOSFET N-CH 550V 48A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFK48N55 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 550 V and a continuous drain current (Id) of 48 A at 25°C (Tc). With a low on-resistance (Rds On) of 110 mOhm at 24 A and 10 V Vgs, it minimizes conduction losses. The MOSFET offers a high power dissipation capability of 560 W (Tc) and a low thermal resistance, crucial for efficient operation. Key parameters include a gate charge (Qg) of 330 nC at 10 V and an input capacitance (Ciss) of 8900 pF at 25 V. The IXFK48N55 is packaged in a TO-264AA (IXFK) through-hole configuration, suitable for power supply rectification, motor control, and industrial power applications. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8900 pF @ 25 V |
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