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IXFK48N55

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IXFK48N55

MOSFET N-CH 550V 48A TO264AA

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS HiPerFET™ IXFK48N55 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 550 V and a continuous drain current (Id) of 48 A at 25°C (Tc). With a low on-resistance (Rds On) of 110 mOhm at 24 A and 10 V Vgs, it minimizes conduction losses. The MOSFET offers a high power dissipation capability of 560 W (Tc) and a low thermal resistance, crucial for efficient operation. Key parameters include a gate charge (Qg) of 330 nC at 10 V and an input capacitance (Ciss) of 8900 pF at 25 V. The IXFK48N55 is packaged in a TO-264AA (IXFK) through-hole configuration, suitable for power supply rectification, motor control, and industrial power applications. It operates within an extended temperature range of -55°C to 150°C.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Rds On (Max) @ Id, Vgs110mOhm @ 24A, 10V
FET Feature-
Power Dissipation (Max)560W (Tc)
Vgs(th) (Max) @ Id4.5V @ 8mA
Supplier Device PackageTO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)550 V
Gate Charge (Qg) (Max) @ Vgs330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 25 V

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