IXFK44N55Q
MOSFET N-CH 550V 44A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK44N55Q is a HiPerFET™, Q Class N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 550 V and a continuous drain current (Id) of 44 A at 25°C, with a maximum power dissipation of 500 W. The device exhibits a low on-resistance (Rds On) of 120 mOhm at 22 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 190 nC at 10 V and input capacitance (Ciss) of 6400 pF at 25 V. It is packaged in a TO-264AA (IXFK) through-hole configuration, suitable for demanding thermal management. This MOSFET is utilized in industries such as power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDownload Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 25 V |
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