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IXFK44N50

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IXFK44N50

MOSFET N-CH 500V 44A TO-264AA

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFK44N50 is a HiPerFET™ N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 44A at 25°C (Tc). With a maximum power dissipation of 500W (Tc), it is suitable for high-power switching operations. The Rds On is specified at 120mOhm maximum at 22A and 10V Vgs. Key parameters include a gate charge (Qg) of 270 nC at 10V and an input capacitance (Ciss) of 8400 pF at 25V. This device is housed in a TO-264AA (IXFK) package for through-hole mounting and operates across a temperature range of -55°C to 150°C. Applications include power supplies, motor control, and industrial automation.

Additional Information

Series: HiPerFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Rds On (Max) @ Id, Vgs120mOhm @ 22A, 10V
FET Feature-
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id4V @ 8mA
Supplier Device PackageTO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 25 V

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