IXFK44N50
MOSFET N-CH 500V 44A TO-264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFK44N50 is a HiPerFET™ N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 44A at 25°C (Tc). With a maximum power dissipation of 500W (Tc), it is suitable for high-power switching operations. The Rds On is specified at 120mOhm maximum at 22A and 10V Vgs. Key parameters include a gate charge (Qg) of 270 nC at 10V and an input capacitance (Ciss) of 8400 pF at 25V. This device is housed in a TO-264AA (IXFK) package for through-hole mounting and operates across a temperature range of -55°C to 150°C. Applications include power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 25 V |
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