IXFK35N50
MOSFET N-CH 500V 35A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK35N50 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. Featuring a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C (Tc), this device offers a low on-resistance of 150mOhm maximum at 16.5A and 10V gate-source voltage. Its robust construction includes a maximum power dissipation of 416W at 25°C (Tc) and a junction temperature range of -55°C to 150°C. The component utilizes a TO-264AA package for through-hole mounting and is supplied in tubes. Key parameters include a gate charge (Qg) of 227 nC at 10V and input capacitance (Ciss) of 5700 pF at 25V. This MOSFET is suitable for use in power supplies, motor control, and other demanding industrial applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 227 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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