IXFK33N50
MOSFET N-CH 500V 33A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK33N50 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 33A at 25°C, with a maximum power dissipation of 416W. The low on-resistance of 160mOhm at 16.5A and 10V gate drive voltage, coupled with a gate charge (Qg) of 227 nC, facilitates efficient switching performance. Its high dv/dt immunity and fast switching speeds make it suitable for power supplies, motor control, and welding equipment. The TO-264AA package with through-hole mounting ensures robust thermal management. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 227 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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