IXFK32N80Q3
MOSFET N-CH 800V 32A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK32N80Q3 is an N-Channel HiPerFET™, Q3 Class power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 32A at 25°C. With a low on-resistance (Rds On) of 270mOhm at 16A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 1000W (Tc) and a gate charge (Qg) of 140 nC at 10V. It is housed in a TO-264AA package, suitable for through-hole mounting. The IXFK32N80Q3 is utilized in power supply units, motor control, and industrial applications requiring robust high-voltage switching. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6940 pF @ 25 V |
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