IXFK32N50Q
MOSFET N-CH 500V 32A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK32N50Q is a HiPerFET™ N-Channel Power MOSFET featuring a 500V drain-to-source voltage and a continuous drain current of 32A at 25°C (Tc). This through-hole component, housed in a TO-264AA package, offers a maximum power dissipation of 416W (Tc). With a low on-resistance of 160mOhm maximum at 16A and 10V Vgs, and a gate charge of 150nC maximum at 10V, it is suitable for high-efficiency switching applications. Key parameters include an input capacitance (Ciss) of 3950pF maximum at 25V and a gate threshold voltage (Vgs(th)) of 4.5V maximum at 4mA. This device finds application in power supply units, industrial motor control, and high-voltage switching circuits.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 25 V |
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