IXFK30N50Q
MOSFET N-CH 500V 30A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK30N50Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 30A at 25°C (Tc). With a maximum power dissipation of 416W (Tc) and a low on-resistance (Rds On) of 160mOhm at 15A and 10V gate drive, it offers excellent conduction loss characteristics. Key parameters include a gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 3950 pF at 25V. The IXFK30N50Q is packaged in a TO-264AA (IXFK) through-hole package, suitable for demanding applications in industries such as industrial power supplies, motor control, and renewable energy systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 25 V |
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