IXFK30N100Q2
MOSFET N-CH 1000V 30A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK30N100Q2 is a high-voltage N-Channel Power MOSFET from the HiPerFET™, Q2 Class series, designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 30 A at 25°C (Tc), with a maximum power dissipation of 735 W (Tc). The Rds(On) is specified at 400 mOhm maximum at 15 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 186 nC (max) at 10 V and input capacitance (Ciss) of 8200 pF (max) at 25 V. The IXFK30N100Q2 is housed in a TO-264AA package for through-hole mounting and operates over a temperature range of -55°C to 150°C. This component is suitable for use in power supply, motor drive, and industrial applications.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 735W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8200 pF @ 25 V |
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