IXFK26N90
MOSFET N-CH 900V 26A TO-264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFK26N90 is an N-Channel power MOSFET designed for high-voltage applications. This component features a Vds of 900V and a continuous drain current (Id) of 26A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 300mOhm maximum at 13A and 10V gate drive. With a power dissipation capability of 560W (Tc), it is suitable for demanding power conversion and switching applications. Key electrical parameters include a gate charge (Qg) of 240 nC maximum at 10V and an input capacitance (Ciss) of 10800 pF maximum at 25V. The IXFK26N90 is housed in a TO-264AA package, facilitating through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This power MOSFET finds application in various industrial sectors including power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V |
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