IXFK26N60Q
MOSFET N-CH 600V 26A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK26N60Q is a HiPerFET™ series N-Channel Power MOSFET designed for demanding applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 26A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The Rds(on) is specified at a maximum of 250mOhms at 13A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 5100 pF at 25V. The device is housed in a TO-264AA (IXFK) package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for power supply, motor control, and lighting applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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