IXFK260N17T
MOSFET N-CH 170V 260A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK260N17T is a high-performance N-Channel Power MOSFET from the GigaMOS™ series, designed for demanding applications. This component features a 170V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 260A at 25°C, with a maximum power dissipation of 1670W. Its low on-resistance (Rds On) is specified at 6.5mOhm at 60A and 10V gate drive voltage. The device is housed in a TO-264AA package for efficient thermal management, supporting a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 400 nC at 10V and input capacitance (Ciss) of 24000 pF at 25V. This MOSFET is suitable for power conversion, motor control, and industrial power supply applications.
Additional Information
Series: GigaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1670W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 170 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 24000 pF @ 25 V |
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