IXFK25N90
MOSFET N-CH 900V 25A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK25N90 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a 900V drain-to-source voltage (Vdss) and a continuous drain current of 25A at 25°C (Tc). With a maximum power dissipation of 560W (Tc) and a low on-resistance of 330mOhm at 500mA and 10V, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 240nC at 10V and input capacitance (Ciss) of 10800pF at 25V. The TO-264AA package facilitates easy integration into power supply designs. This device is suitable for use in power factor correction, switch mode power supplies, and industrial motor control applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V |
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