IXFK24N90Q
MOSFET N-CH 900V 24A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK24N90Q is a high-performance N-Channel Power MOSFET from the HiPerFET™, Q Class series. This device features a high drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 24A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The Rds On is specified at 450mOhm maximum at 500mA and 10V Vgs. Key characteristics include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 5900 pF at 25V. The component is housed in a TO-264AA (IXFK) package with a through-hole mounting type, operating across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power supplies, industrial motor control, and high-voltage switching.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 25 V |
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