IXFK24N100F
MOSFET N-CH 1000V 24A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerRF™ IXFK24N100F is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 24 A at 25°C with a maximum power dissipation of 560 W. The low on-resistance of 390 mOhm at 12 A and 10 V drive voltage, coupled with a gate charge of 195 nC, ensures efficient switching. Its high input capacitance (Ciss) of 6600 pF at 25 V is characteristic of its high-voltage rating. The device is housed in a TO-264AA package for through-hole mounting and operates within an ambient temperature range of -55°C to 150°C. This MOSFET finds application in power factor correction, switch-mode power supplies, and induction heating systems.
Additional Information
Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | TO-264AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
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