IXFK24N100
MOSFET N-CH 1KV 24A TO-264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK24N100 is an N-Channel HiPerFET™ power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 24 A at 25°C, with a maximum power dissipation of 560 W at the same temperature. The device offers a low on-resistance (Rds On) of 390 mOhm at 12 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 267 nC and input capacitance (Ciss) of 8700 pF at 25 V. The IXFK24N100 is housed in a TO-264AA package, suitable for through-hole mounting. It operates within an ambient temperature range of -55°C to 150°C. This MOSFET is utilized in power conversion systems, industrial power supplies, and high-voltage switching applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 267 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8700 pF @ 25 V |
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