IXFK21N100F
MOSFET N-CH 1000V 21A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerRF™ IXFK21N100F is an N-Channel power MOSFET featuring a 1000V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C (Tc). This through-hole component, housed in a TO-264AA package, offers a maximum power dissipation of 500W (Tc) and a low on-resistance (Rds On) of 500mOhm at 10.5A, 10V. Key parameters include a gate charge (Qg) of 160nC at 10V and input capacitance (Ciss) of 5500pF at 25V. The IXFK21N100F is suitable for high-voltage switching applications in industries such as power supplies, industrial automation, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±20V, with a threshold voltage (Vgs(th)) of 5.5V at 4mA.
Additional Information
Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | TO-264AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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