IXFK210N17T
MOSFET N-CH 170V 210A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFK210N17T is an N-Channel Power MOSFET from the GigaMOS™ series, featuring a 170V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 210A at 25°C (Tc). This high-power device offers a maximum power dissipation of 1150W (Tc) and a low on-resistance (Rds On) of 7.5mOhm at 60A and 10V gate drive. The MOSFET is housed in a TO-264AA (IXFK) package for through-hole mounting, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 285 nC at 10V and input capacitance (Ciss) of 18800 pF at 25V. It is designed for operation across a wide temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) up to ±20V. This component is suitable for high-power switching applications in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: GigaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 210A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 170 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18800 pF @ 25 V |
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