IXFK20N80Q
MOSFET N-CH 800V 20A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS HiPerFET™ IXFK20N80Q is an N-Channel Power MOSFET designed for high voltage applications. This through-hole component offers a Vdss rating of 800 V and a continuous drain current (Id) of 20 A at 25°C. With a maximum power dissipation of 360 W (Tc), it is suitable for demanding power conversion and switching applications. Key electrical characteristics include a low Rds On of 420 mOhm at 10 A and 10 V, an input capacitance (Ciss) of 5100 pF at 25 V, and a gate charge (Qg) of 200 nC at 10 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is presented in a TO-264AA package. This component finds utility in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
