IXFK20N120P
MOSFET N-CH 1200V 20A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK20N120P is an N-Channel HiPerFET™ Polar MOSFET designed for high-voltage applications. This device features a 1200 V drain-source voltage (Vdss) and can handle a continuous drain current of 20A at 25°C (Tc), with a maximum power dissipation of 780W (Tc). The Rds On is specified at a maximum of 570mOhm at 10A and 10V Vgs. Key parameters include a gate charge (Qg) of 193 nC (max) at 10V and input capacitance (Ciss) of 11100 pF (max) at 25V. The operating temperature range is -55°C to 150°C (TJ). Packaged in a TO-264AA (IXFK) through-hole configuration, this component is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 570mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 193 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11100 pF @ 25 V |
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