IXFK20N120
MOSFET N-CH 1200V 20A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK20N120 is a N-Channel HiPerFET™ Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum power dissipation of 780W (Tc), it is suitable for demanding power conversion and switching tasks. The device has a low on-resistance (Rds On) of 750mOhm at 500mA and 10V, facilitating efficient operation. Key characteristics include a high gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 7400 pF at 25V. The IXFK20N120 is housed in a TO-264AA (IXFK) package, designed for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supplies, motor drives, and industrial automation systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 25 V |
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