IXFK180N15P
MOSFET N-CH 150V 180A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK180N15P is an N-Channel HiPerFET™ Polar MOSFET designed for high-power applications. This component features a maximum drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 180 A at 25°C (Tc). With a low on-resistance of 11 mOhm at 90 A and 10 V, this device offers efficient power handling up to 830 W (Tc). The IXFK180N15P utilizes a through-hole mounting type in a TO-264AA package, suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 240 nC at 10 V and an input capacitance (Ciss) of 7000 pF at 25 V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is frequently used in power switching, motor control, and power supply applications across various industrial sectors.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 25 V |
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