IXFK180N085
MOSFET N-CH 85V 180A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFK180N085 is an N-Channel Power MOSFET featuring an 85V drain-source voltage and a continuous drain current of 180A at 25°C (Tc). This device offers a low on-resistance of 7mOhm maximum at 500mA and 10V Vgs. The IXFK180N085 is designed for high power applications with a maximum power dissipation of 560W (Tc). It is packaged in a TO-264AA through-hole package, suitable for demanding thermal environments. Key electrical characteristics include a gate charge of 320 nC at 10V and input capacitance of 9100 pF at 25V. This MOSFET is utilized in power conversion, electric vehicle power trains, and industrial motor control applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 320 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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