IXFK170N10
MOSFET N-CH 100V 170A TO-264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK170N10 is a high-performance N-Channel Power MOSFET from the HiPerFET™ series, designed for demanding power applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 170A at 25°C, with a maximum power dissipation of 560W. The low on-resistance (Rds On) of 10mOhm at 500mA and 10V drive voltage, coupled with a gate charge (Qg) of 515 nC at 10V, ensures efficient switching. The MOSFET's high current handling capability and robust thermal performance make it suitable for applications in power supplies, motor control, and industrial automation. It is housed in a TO-264AA package for through-hole mounting and operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 515 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
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