IXFK16N90Q
MOSFET N-CH 900V 16A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFK16N90Q is a HiPerFET™, Q Class N-Channel Power MOSFET designed for high-performance applications. This component features a 900V drain-to-source voltage (Vdss) and a continuous drain current of 16A at 25°C (Tc). With a maximum power dissipation of 360W (Tc), it is suitable for demanding power conversion tasks. The IXFK16N90Q exhibits a low on-resistance (Rds On) of 650mOhm at 8A and 10V gate-source voltage, and a gate charge (Qg) of 170 nC at 10V. Input capacitance (Ciss) is 4000 pF at 25V. This through-hole device is housed in a TO-264AA package, facilitating robust thermal management. It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, solar inverters, and motor control systems.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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