IXFK14N100Q
MOSFET N-CH 1000V 14A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK14N100Q is an N-Channel HiPerFET™ power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 14 A at 25°C (Tc). With a maximum power dissipation of 360 W (Tc) and an Rds On of 750 mOhm at 7 A and 10 V, it offers efficient switching performance. The device has a gate charge (Qg) of 170 nC at 10 V and an input capacitance (Ciss) of 4500 pF at 25 V. Packaged in a TO-264AA (IXFK) through-hole package, this MOSFET is suitable for demanding power conversion and control circuits across various industrial sectors, including power supplies, motor drives, and industrial automation. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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