IXFK120N25
MOSFET N-CH 250V 120A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK120N25 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 560W (Tc). Key electrical parameters include a low on-resistance (Rds On) of 22mOhm at 500mA and 10V Vgs, and a gate charge (Qg) of 400 nC at 10V. The input capacitance (Ciss) is specified at 9400 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-264AA package for through-hole mounting. This MOSFET is suitable for use in various industrial sectors, including power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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