IXFK110N07
MOSFET N-CH 70V 110A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK110N07 is a HiPerFET™ N-Channel power MOSFET with a 70V drain-source voltage and a continuous drain current capability of 110A at 25°C. This device features a low on-resistance of 6mOhm at 55A and 10V Vgs, enabling high-efficiency power switching. With a maximum power dissipation of 500W at 25°C (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 480nC at 10V and input capacitance (Ciss) of 9000pF at 25V. The IXFK110N07 is housed in a TO-264AA package for through-hole mounting, offering robust thermal performance. It operates across a temperature range of -55°C to 150°C. This component finds application in power conversion, electric vehicle systems, and industrial motor control.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 70 V |
| Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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