IXFK102N30P
MOSFET N-CH 300V 102A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFK102N30P is an N-Channel HiPerFET™ Polar MOSFET designed for high-power switching applications. This component features a maximum drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 102A at 25°C (Tc). With a low on-resistance (Rds On) of 33mOhm at 500mA and 10V, it minimizes conduction losses. The device offers a high power dissipation capability of 700W (Tc) and a gate charge (Qg) of 224 nC at 10V. Its TO-264AA package with through-hole mounting is suitable for demanding power supply designs, industrial automation, and motor control systems. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 224 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |