IXFK100N25
MOSFET N-CH 250V 100A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK100N25 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 560W (Tc). The device exhibits a low on-resistance (Rds On) of 27mOhm at 50A and 10V, facilitated by a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 300 nC (max) at 10V and input capacitance (Ciss) of 9100 pF (max) at 25V. The IXFK100N25 is housed in a TO-264AA package for through-hole mounting, operating within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |