IXFJ80N25X3
MOSFET N-CH 250V 44A ISO TO247-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFJ80N25X3 is an N-Channel HiPerFET™, Ultra X3 series power MOSFET designed for high-efficiency power switching applications. This component features a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 44A at 25°C (Tc), with a maximum power dissipation of 104W (Tc). The device exhibits a low on-resistance (Rds On) of 18mOhm at 40A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 83 nC at 10V and input capacitance (Ciss) of 5430 pF at 25V. The IXFJ80N25X3 is housed in an isolated TO-247-3 package suitable for through-hole mounting. Its robust construction and performance characteristics make it suitable for use in power supplies, motor control, and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Ultra X3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Supplier Device Package | ISO TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5430 pF @ 25 V |
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