IXFJ40N30Q
MOSFET N-CHANNEL 300V 40A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFJ40N30Q is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a Drain to Source Voltage (Vdss) of 300V and continuous drain current (Id) of 40A at 25°C (Tc), this component offers robust switching capabilities. The IXFJ40N30Q boasts a low on-resistance (Rds On) of 80mOhm maximum at 20A and 10V gate drive. Key parameters include a gate charge (Qg) of 200 nC maximum at 10V and input capacitance (Ciss) of 4800 pF maximum at 25V. With a maximum power dissipation of 300W at 25°C (Tc) and an operating temperature range of -55°C to 150°C (TJ), it is suitable for high-power conversion, industrial motor control, and power supply applications. The device is presented in a TO-268 package for through-hole mounting.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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