IXFJ40N30
MOSFET N-CH 300V 40A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFJ40N30 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component offers a drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 40A at 25°C. It features a low on-resistance (Rds On) of 80mOhm maximum at 20A and 10V gate drive. The device boasts a maximum power dissipation of 300W at 25°C case temperature and a low gate charge (Qg) of 200nC maximum at 10V. With an input capacitance (Ciss) of 4800pF maximum at 25V, it is suitable for demanding power conversion circuits. The IXFJ40N30 is housed in a TO-268 package and operates across a temperature range of -55°C to 150°C. This device finds application in switch-mode power supplies, power factor correction, and motor control systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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