IXFJ32N50Q
MOSFET N-CH 500V 32A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFJ32N50Q is a HiPerFET™ N-Channel Power MOSFET designed for demanding applications. This component features a 500 V breakdown voltage (Vdss) and a continuous drain current capability of 32 A at 25°C (Tc). With a maximum power dissipation of 360 W (Tc), it is suitable for high-power switching applications. Key electrical characteristics include a low on-resistance (Rds On) of 150 mOhm maximum at 16 A, 10 V, and a gate charge (Qg) of 153 nC maximum at 10 V. The input capacitance (Ciss) is specified at 3950 pF maximum at 25 V. This MOSFET utilizes Metal Oxide technology and is housed in a TO-268 package with a short tab, designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). The IXFJ32N50Q finds application in power supply units, motor control, and industrial power conversion systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-268 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 25 V |
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