IXYS IXFJ26N50, a high-performance N-channel power MOSFET, offers exceptional switching capabilities for demanding applications. This TO-247 packaged device features a drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 14A, with a pulsed drain current (IDM) of 80A. Its low on-resistance (RDS(on)) of 0.22 ohms at VGS = 10V ensures efficient power transfer and minimizes conduction losses. The IXFJ26N50 is designed for high-frequency switching, making it suitable for power supplies, motor control, and industrial automation systems. Its robust construction and thermal performance are optimized for reliability in challenging environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk