IXFH9N80Q
MOSFET N-CH 800V 9A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH9N80Q is an N-Channel Power MOSFET from the HiPerFET™, Q Class series. This component features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 9 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.1 Ohm at 500 mA and 10 V, it offers efficient switching. The device has a gate charge (Qg) of 56 nC maximum at 10 V and input capacitance (Ciss) of 2200 pF maximum at 25 V. It is housed in a TO-247AD (IXFH) package with a through-hole mounting type. The maximum power dissipation is 180 W (Tc). This MOSFET is suitable for applications in high-voltage power supplies, industrial motor control, and lighting.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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