IXFH96N20P
MOSFET N-CH 200V 96A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH96N20P is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 96A at 25°C case temperature. With a low on-resistance (Rds On) of 24mOhm at 10V gate-source voltage and 500mA drain current, it minimizes conduction losses. The device offers a substantial power dissipation capability of 600W, ensuring reliability in high-power switching environments. Key parameters include a gate charge (Qg) of 145nC at 10V and input capacitance (Ciss) of 4800pF at 25V. Operating within a temperature range of -55°C to 175°C, this MOSFET is housed in a TO-247AD (IXFH) package for efficient heat dissipation and is suitable for industrial, power supply, and motor control applications.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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