IXFH8N80
MOSFET N-CH 800V 8A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH8N80 is an N-Channel Power MOSFET designed for high voltage applications. This single FET offers a 800V Drain-to-Source Voltage (Vdss) and a continuous drain current of 8A at 25°C (Tc). Featuring a low on-resistance of 1.1Ohm maximum at 4A and 10V Vgs, it supports efficient power switching. The device is packaged in a TO-247AD (IXFH) through-hole configuration, ideal for demanding thermal management. Key parameters include a Gate Charge of 130nC typical at 10V Vgs and an input capacitance (Ciss) of 2600pF maximum at 25V Vds. With a maximum power dissipation of 180W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for power factor correction, switch-mode power supplies, and high-voltage inverters.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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