IXFH80N15Q
MOSFET N-CH 150V 80A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH80N15Q is an N-Channel Power MOSFET designed for high-efficiency power switching applications. It features a maximum drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 80A at 25°C (Tc). This device offers a low on-resistance (Rds On) of 22.5 mOhm at 40A and 10V, contributing to reduced conduction losses. With a maximum power dissipation of 360W (Tc), it is suitable for demanding thermal environments. The IXFH80N15Q utilizes a TO-247AD package for through-hole mounting, providing robust thermal performance and ease of integration into power systems. Key parameters include a gate charge (Qg) of 180 nC at 10V and an input capacitance (Ciss) of 4500 pF at 25V. This component finds application in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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