IXFH80N10Q
MOSFET N-CH 100V 80A TO-247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™ IXFH80N10Q is an N-channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The low on-resistance (Rds On) of 15mOhm at 40A and 10V drive voltage, combined with a gate charge (Qg) of 180 nC at 10V, ensures efficient switching performance. The input capacitance (Ciss) is rated at 4500 pF at 25V. This through-hole device is housed in a TO-247AD (IXFH) package, suitable for high-power switching and amplification circuits in industries such as industrial power supplies, motor control, and renewable energy systems. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
