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IXFH80N10

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IXFH80N10

MOSFET N-CH 100V 80A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH80N10 is a HiPerFET™ N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The Rds(On) is specified at a maximum of 12.5mOhm at 40A and 10V drive voltage. Key parameters include a gate charge (Qg) of 180nC at 10V and input capacitance (Ciss) of 4800pF at 25V. The device utilizes TO-247AD packaging for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). The IXFH80N10 is suitable for demanding power conversion and control systems across various industrial sectors.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs12.5mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 25 V

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