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IXFH80N085

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IXFH80N085

MOSFET N-CH 85V 80A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS HiPerFET™ IXFH80N085 is an N-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a drain-source voltage (Vdss) of 85 V and a continuous drain current (Id) of 80A at 25°C (Tc), this device offers a low on-resistance (Rds On) of 9 mOhm at 40A and 10V Vgs. The component boasts a maximum power dissipation of 300W (Tc) and a gate charge (Qg) of 180 nC at 10V. Its input capacitance (Ciss) is rated at 4800 pF at 25V. Packaged in a TO-247AD (IXFH) through-hole configuration, the IXFH80N085 operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply design, motor control, and industrial automation.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)85 V
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 25 V

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