IXFH80N085
MOSFET N-CH 85V 80A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFH80N085 is an N-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a drain-source voltage (Vdss) of 85 V and a continuous drain current (Id) of 80A at 25°C (Tc), this device offers a low on-resistance (Rds On) of 9 mOhm at 40A and 10V Vgs. The component boasts a maximum power dissipation of 300W (Tc) and a gate charge (Qg) of 180 nC at 10V. Its input capacitance (Ciss) is rated at 4800 pF at 25V. Packaged in a TO-247AD (IXFH) through-hole configuration, the IXFH80N085 operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply design, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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