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IXFH80N06

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IXFH80N06

MOSFET N-CH 60V 80A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXFH80N06 is an N-Channel Power MOSFET designed for high-current applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C case temperature. It is housed in a TO-247AD package, suitable for through-hole mounting. The MOSFET technology ensures efficient switching performance, with a recommended gate-source drive voltage of 10V. This device is utilized in various industrial sectors, including power supplies, motor control, and automotive systems, where robust power handling is critical. The ±20V maximum gate-source voltage (Vgs) provides a wide operational range for driving the device.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs-
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id-
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V

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