IXFH7N80
MOSFET N-CH 800V 7A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFH7N80 is an N-Channel Power MOSFET designed for high voltage applications. This HiPerFET™ series component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 7A at 25°C. With a maximum power dissipation of 180W (Tc) and a low on-resistance (Rds On) of 1.4 Ohm at 3.5A and 10V gate drive, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 2800 pF at 25V. The device is housed in a TO-247-3 package with a TO-247AD (IXFH) supplier device package for through-hole mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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