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IXFH76N07-12

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IXFH76N07-12

MOSFET N-CH 70V 76A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFH76N07-12 is a HiPerFET™ N-Channel MOSFET designed for high-power applications. This component features a Drain-Source Voltage (Vdss) of 70V and a continuous Drain Current (Id) of 76A at 25°C (Tc). With a low on-resistance (Rds On) of 12mOhm at 40A and 10V, it facilitates efficient power transfer. The device offers a maximum power dissipation of 360W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a Gate Charge (Qg) of 240 nC at 10V and an input capacitance (Ciss) of 4400 pF at 25V. The IXFH76N07-12 is housed in a TO-247AD through-hole package, making it suitable for power supplies, motor control, and industrial automation.

Additional Information

Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)360W (Tc)
Vgs(th) (Max) @ Id3.4V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)70 V
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 25 V

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