IXFH76N07-11
MOSFET N-CH 70V 76A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFH76N07-11, offers a 70V drain-to-source voltage and 76A continuous drain current at 25°C (Tc). This device features a low on-resistance of 11mOhm maximum at 40A and 10V gate-source voltage. With a gate charge (Qg) of 240 nC maximum at 10V and input capacitance (Ciss) of 4400 pF maximum at 25V, it is suitable for demanding power switching applications. The TO-247AD package provides a 360W maximum power dissipation (Tc) and a through-hole mounting type. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 70 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |