IXFH75N10Q
MOSFET N-CH 100V 75A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFH75N10Q is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This through-hole component features a continuous drain current (Id) of 75A at 25°C and a maximum power dissipation of 300W. The Rds(On) is rated at a maximum of 20mOhm at 37.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 180 nC at 10V and input capacitance (Ciss) of 3700 pF at 25V. The device operates within a temperature range of -55°C to 150°C and is supplied in a TO-247AD package. This MOSFET is well-suited for applications in power supply, motor control, and industrial automation.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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