IXFH75N10
MOSFET N-CH 100V 75A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFH75N10 is a HiPerFET™ N-Channel Power MOSFET designed for demanding applications. This component features a Vdss rating of 100V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance is specified at 20mOhm at 37.5A and 10V gate drive. Key characteristics include a gate charge (Qg) of 260 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. The device is housed in a TO-247AD (IXFH) package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in power conversion, motor control, and industrial power supply applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
