IXFH74N20
MOSFET N-CH 200V 74A TO247ADManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFH74N20 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 74A at 25°C (Tc). With a low on-resistance (Rds On) of 30mOhm at 500mA and 10V gate-source voltage, it minimizes conduction losses. Key parameters include a gate charge (Qg) of 280 nC at 10V and input capacitance (Ciss) of 5400 pF at 25V. The device supports a maximum power dissipation of 360W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-247AD (IXFH) through-hole configuration and supplied in tubes, this MOSFET is suitable for use in demanding applications such as power supplies, motor control, and industrial automation. The maximum gate-source voltage is ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-247AD (IXFH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
