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IXFH70N15

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IXFH70N15

MOSFET N-CH 150V 70A TO247AD

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

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The IXYS IXFH70N15 is a HiPerFET™ N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 70A at 25°C (Tc). With a low on-resistance (Rds On) of 28mOhm at 35A and 10V, it offers efficient power handling, with a maximum power dissipation of 300W (Tc). The gate charge (Qg) is 180 nC maximum at 10V, and input capacitance (Ciss) is 3600 pF maximum at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this device is housed in a TO-247AD (IXFH) package suitable for through-hole mounting. Its robust construction and performance characteristics make it suitable for use in power supplies, motor control, and other high-power switching applications across various industrial sectors.

Additional Information

Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 4mA
Supplier Device PackageTO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V

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